- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Collector-Emitter Saturation Voltage :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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GET PRICE |
2,710
In-stock
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onsemi | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-3P-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.1 V | 40 A | +/- 100 nA | +/- 20 V | |||
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82
In-stock
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onsemi | IGBT Transistors RC2 IGBT 10A 600V DPAK | SMD/SMT | DPAK-3 | + 175 C | Reel | 72 W | Single | 600 V | 1.7 V | 20 A | +/- 100 nA | +/- 20 V | ||||
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2,368
In-stock
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onsemi | IGBT Transistors RC2 IGBT 5A 600V DPAK | SMD/SMT | DPAK-3 | + 175 C | Reel | 56 W | Single | 600 V | 1.65 V | 16 A | +/- 100 nA | +/- 20 V | ||||
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2,017
In-stock
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onsemi | IGBT Transistors RC2 IGBT 3A 600V DPAK | SMD/SMT | DPAK-3 | + 175 C | Reel | 49 W | Single | 600 V | 1.7 V | 9 A | +/- 100 nA | +/- 20 V | ||||
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152
In-stock
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onsemi | IGBT Transistors RC2 IGBT 15A 600V | Through Hole | TO-220-3 | + 175 C | Tube | 54 W | Single | 600 V | 1.85 V | 24 A | +/- 100 nA | +/- 20 V | ||||
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3,400
In-stock
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onsemi | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-264-3 | + 150 C | Tube | 250 W | Single | 600 V | 2.1 V | 160 A | +/- 100 nA | +/- 20 V |