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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB30N120L2WG
1+
$8.380
10+
$7.570
25+
$7.220
100+
$6.270
RFQ
74
In-stock
onsemi IGBT Transistors 1200V/30A LOW VCE SAT FSII Through Hole TO-247 + 175 C Tube 534 W Single 1200 V 1.7 V 60 A 200 nA 30 V
NGTB30N120FL2WG
1+
$8.140
10+
$7.360
25+
$7.020
100+
$6.090
RFQ
140
In-stock
onsemi IGBT Transistors 1200V/30A FAST IGBT FSII Through Hole TO-247 + 175 C Tube 452 W Single 1200 V 2 V 60 A 200 nA 30 V
NGTB30N120IHLWG
1+
$5.730
10+
$4.610
25+
$4.530
100+
$4.200
RFQ
80
In-stock
onsemi IGBT Transistors 1200V/30A FS1 IGBT IH Through Hole TO-247 + 150 C Tube 260 W Single 1200 V 1.75 V 60 A 200 nA 20 V
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