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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB30N60IHLWG
1+
$4.290
10+
$3.650
100+
$3.160
250+
$3.000
RFQ
210
In-stock
onsemi IGBT Transistors 600V/30A IGBT FS1 IH TO Through Hole TO-247 + 150 C Tube 250 W Single 600 V 1.8 V 60 A 100 nA 20 V
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