- Package / Case :
- Maximum Operating Temperature :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,137
In-stock
|
onsemi | IGBT Transistors 1200V/50A FAST IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 535 W | Single | 1200 V | 2.2 V | 100 A | 200 nA | 30 V | |||
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122
In-stock
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onsemi | IGBT Transistors 1200V/40 FAST IGBT FSII T | Through Hole | TO-247-4 | - 55 C | Tube | 268 W | Single | 1200 V | 160 A | 200 nA | 30 V | ||||
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74
In-stock
|
onsemi | IGBT Transistors 1200V/30A LOW VCE SAT FSII | Through Hole | TO-247 | + 175 C | Tube | 534 W | Single | 1200 V | 1.7 V | 60 A | 200 nA | 30 V | |||
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GET PRICE |
9,800
In-stock
|
onsemi | IGBT Transistors 1200V/40A FAST IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 535 W | Single | 1200 V | 2 V | 80 A | 200 nA | 30 V | ||
|
|
140
In-stock
|
onsemi | IGBT Transistors 1200V/30A FAST IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 452 W | Single | 1200 V | 2 V | 60 A | 200 nA | 30 V |
