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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB40N120FL2WG
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RFQ
9,800
In-stock
onsemi IGBT Transistors 1200V/40A FAST IGBT FSII Through Hole TO-247 + 175 C Tube 535 W Single 1200 V 2 V 80 A 200 nA 30 V
NGTB40N60FLWG
1+
$5.560
10+
$4.730
100+
$4.100
250+
$3.890
RFQ
152
In-stock
onsemi IGBT Transistors IGBT 600V 40A FS1 Solar/UPS Through Hole TO-247 + 150 C Tube 257 W Single 600 V 1.85 V 80 A 100 nA 30 V
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