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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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210
In-stock
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onsemi | IGBT Transistors 600V/30A IGBT FS1 IH TO | Through Hole | TO-247 | + 150 C | Tube | 250 W | Single | 600 V | 1.8 V | 60 A | 100 nA | 20 V | ||||
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3,400
In-stock
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onsemi | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-264-3 | + 150 C | Tube | 250 W | Single | 600 V | 2.1 V | 160 A | +/- 100 nA | +/- 20 V | ||||
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210
In-stock
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onsemi | IGBT Transistors 600V/30A IGBT LPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 250 W | Single | 600 V | 1.65 V | 60 A | 100 nA | 30 V | ||||
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180
In-stock
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onsemi | IGBT Transistors 600V/40A IGBT FS1 IH TO | Through Hole | TO-247 | + 150 C | Tube | 250 W | Single | 600 V | 2 V | 80 A | 100 nA | 20 V |