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Package / Case :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB30N60IHLWG
1+
$4.290
10+
$3.650
100+
$3.160
250+
$3.000
RFQ
210
In-stock
onsemi IGBT Transistors 600V/30A IGBT FS1 IH TO Through Hole TO-247 + 150 C Tube 250 W Single 600 V 1.8 V 60 A 100 nA 20 V
G160N60
1+
$11.420
10+
$10.320
25+
$9.840
100+
$8.540
RFQ
3,400
In-stock
onsemi IGBT Transistors Dis High Perf IGBT Through Hole TO-264-3 + 150 C Tube 250 W Single 600 V 2.1 V 160 A +/- 100 nA +/- 20 V
NGTG30N60FLWG
1+
$3.870
10+
$3.290
100+
$2.850
250+
$2.710
RFQ
210
In-stock
onsemi IGBT Transistors 600V/30A IGBT LPT TO-247 Through Hole TO-247 + 150 C Tube 250 W Single 600 V 1.65 V 60 A 100 nA 30 V
NGTB40N60IHLWG
1+
$4.470
10+
$3.800
25+
$3.730
100+
$3.290
RFQ
180
In-stock
onsemi IGBT Transistors 600V/40A IGBT FS1 IH TO Through Hole TO-247 + 150 C Tube 250 W Single 600 V 2 V 80 A 100 nA 20 V
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