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Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB45N60S1WG
1+
$3.150
10+
$2.680
100+
$2.330
250+
$2.210
RFQ
165
In-stock
onsemi IGBT Transistors FSII 45A 600V Welding Through Hole TO-247-3 + 175 C Tube 300 W Single 600 V 2 V 90 A 200 nA +/- 20 V
NGTB30N65IHL2WG
1+
$4.290
10+
$3.650
100+
$3.160
250+
$3.000
RFQ
210
In-stock
onsemi IGBT Transistors 650V/30A FAST IGBT FSII T Through Hole TO-247-3 + 175 C Tube 300 W Single 650 V 1.6 V 60 A 100 nA +/- 20 V
NGTB45N60S2WG
1+
$4.190
10+
$3.560
100+
$3.090
250+
$2.930
RFQ
189
In-stock
onsemi IGBT Transistors FSII 45A 600V Welding Through Hole TO-247-3 + 175 C Tube 300 W Single 600 V 2 V 90 A 100 nA +/- 20 V
NGTB35N60FL2WG
1+
$2.970
10+
$2.520
100+
$2.190
250+
$2.080
RFQ
210
In-stock
onsemi IGBT Transistors 600V/35A FAST IGBT FSII T Through Hole TO-247-3 + 175 C Tube 300 W Single 600 V 2.2 V 70 A 200 nA 20 V
NGTB35N65FL2WG
1+
$2.970
10+
$2.520
100+
$2.190
250+
$2.080
RFQ
169
In-stock
onsemi IGBT Transistors 650V/35A FAST IGBT FSII T Through Hole TO-247-3 + 175 C Tube 300 W Single 650 V 2.2 V 70 A 200 nA 20 V
NGTG35N65FL2WG
1+
$3.710
10+
$3.150
100+
$2.740
250+
$2.600
RFQ
30
In-stock
onsemi IGBT Transistors 650V/35A FAST IGBT FSII Through Hole TO-247-3 + 175 C Tube 300 W Single 650 V 2.2 V 70 A 200 nA +/- 20 V
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