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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGF10H60DF
1+
$1.510
10+
$1.280
100+
$1.020
500+
$0.893
VIEW
RFQ
STMicroelectronics IGBT Transistors Trench gate H series 600V 10A HiSpd Through Hole TO-220-3 FP + 175 C Tube 30 W Single 600 V 1.5 V 20 A 250 nA +/- 20 V
STGP10NB60S
1+
$1.830
10+
$1.550
100+
$1.240
500+
$1.090
RFQ
604
In-stock
STMicroelectronics IGBT Transistors N-Ch 600 Volt 10 Amp Through Hole TO-220-3 + 150 C Tube 80 W Single 600 V 1.7 V 20 A +/- 100 nA +/- 20 V
STGP10H60DF
1+
$1.880
10+
$1.590
100+
$1.280
500+
$1.120
RFQ
576
In-stock
STMicroelectronics IGBT Transistors Trench gate H series 600V 10A HiSpd Through Hole TO-220-3 + 175 C Tube 115 W Single 600 V 1.5 V 20 A 250 nA +/- 20 V
STGF10NB60SD
1+
$1.590
10+
$1.350
100+
$1.080
500+
$0.946
RFQ
998
In-stock
STMicroelectronics IGBT Transistors N-Ch 600 Volt 10 Amp Through Hole TO-220-3 FP + 150 C Tube 25 W Single 600 V 1.8 V 20 A +/- 100 nA +/- 20 V
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