- Package / Case :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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411
In-stock
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STMicroelectronics | IGBT Transistors 600V 60A High Speed Trench Gate IGBT | Through Hole | TO-247 | + 175 C | Tube | 375 W | Single | 600 V | 2.35 V | 80 A | 250 nA | 20 V | |||
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305
In-stock
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STMicroelectronics | IGBT Transistors 600V 60A Trench Gate Field-Stop IGBT | Through Hole | TO-3P-3 | + 175 C | Tube | 375 W | Single | 600 V | 2.35 V | 80 A | +/- 20 V | ||||
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278
In-stock
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STMicroelectronics | IGBT Transistors 600V 60A trench gate field-stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 600 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||
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458
In-stock
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STMicroelectronics | IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 600 V | 2.35 V | 80 A | +/- 20 V | ||||
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573
In-stock
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STMicroelectronics | IGBT Transistors 600V 60A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 375 W | Single | 600 V | 1.6 V | 80 A | 250 nA | +/- 20 V |