Build a global manufacturer and supplier trusted trading platform.
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGW60V60DF
1+
$6.290
10+
$5.350
100+
$4.640
250+
$4.400
RFQ
411
In-stock
STMicroelectronics IGBT Transistors 600V 60A High Speed Trench Gate IGBT Through Hole TO-247 + 175 C Tube 375 W Single 600 V 2.35 V 80 A 250 nA 20 V
STGWT60V60DF
1+
$5.330
10+
$4.530
100+
$3.930
250+
$3.730
RFQ
305
In-stock
STMicroelectronics IGBT Transistors 600V 60A Trench Gate Field-Stop IGBT Through Hole TO-3P-3 + 175 C Tube 375 W Single 600 V 2.35 V 80 A   +/- 20 V
STGW60H60DLFB
1+
$5.010
10+
$4.260
100+
$3.690
250+
$3.500
RFQ
278
In-stock
STMicroelectronics IGBT Transistors 600V 60A trench gate field-stop IGBT Through Hole TO-247-3 + 175 C Tube 375 W Single 600 V 1.6 V 80 A 250 nA +/- 20 V
STGW60V60F
1+
$5.300
10+
$4.500
100+
$3.910
250+
$3.710
RFQ
458
In-stock
STMicroelectronics IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT Through Hole TO-247-3 + 175 C Tube 375 W Single 600 V 2.35 V 80 A   +/- 20 V
STGWT60H60DLFB
1+
$5.290
10+
$4.490
25+
$4.420
100+
$3.900
RFQ
573
In-stock
STMicroelectronics IGBT Transistors 600V 60A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 375 W Single 600 V 1.6 V 80 A 250 nA +/- 20 V
Page 1 / 1