IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	STGW30H60DFB	1+ $3.510 10+ $2.980 100+ $2.590 250+ $2.450		PDF RFQ	458 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C	Tube	260 W	Single	600 V	1.55 V	60 A	250 nA	20 V
	STGWT30H60DFB	1+ $3.230 10+ $2.740 100+ $2.380 250+ $2.260		PDF RFQ	590 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-3P	+ 175 C	Tube	260 W	Single	600 V	1.55 V	60 A	250 nA	20 V

STGW30H60DFB

STGW30H60DFB

STMicroelectronics

IGBT Transistors IGBT & Power Bipolar

Stock : 458

1+: $3.510

10+: $2.980

100+: $2.590

250+: $2.450

STGWT30H60DFB

STGWT30H60DFB

STMicroelectronics

IGBT Transistors IGBT & Power Bipolar

Stock : 590

1+: $3.230

10+: $2.740

100+: $2.380

250+: $2.260

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