- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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861
In-stock
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STMicroelectronics | IGBT Transistors 60A 650V Field Stop Trench Gate IBGT | SMD/SMT | TO-247 | Tube | 360 W | 650 V | 1.9 V | 120 A | 250 nA | 20 V | |||||
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918
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | DPAK-3 | + 175 C | Reel | 62.5 W | Single | 600 V | 2.75 V | 18 A | 100 nA | 20 V | |||
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3,000
In-stock
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STMicroelectronics | IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast | SMD/SMT | D2PAK | Reel | 75 W | 1200 V | 2.3 V | 14 A | 100 nA | 20 V | |||||
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2,500
In-stock
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STMicroelectronics | IGBT Transistors 4.5 A 600V IGBT 20V VGE 25A IFSM | SMD/SMT | DPAK | + 150 C | Reel | 38 W | 600 V | 2.95 V | 7.5 A | 100 nA | 20 V | ||||
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835
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK-3 | + 175 C | Reel | 258 W | Single | 600 V | 1.85 V | 60 A | 250 nA | 20 V | |||
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK-3 | + 175 C | Reel | 167 W | Single | 600 V | 1.8 V | 40 A | 250 nA | 20 V |