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Maximum Operating Temperature :
Packaging :
Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGB4615DPBF
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375
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IR / Infineon IGBT Transistors 600V TRENCH IGBT ULTRAFAST Through Hole TO-220AB-3 + 175 C Tube 99 W Single 600 V 2 V 23 A 100 nA +/- 20 V
IRGS4615DPBF
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5
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IR / Infineon IGBT Transistors 600V TRENCH IGBT ULTRAFAST SMD/SMT TO-263-3 + 175 C Tube 99 W Single 600 V 2 V 23 A 100 nA +/- 20 V
AUIRG4BC30USTRR
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IR / Infineon IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE... SMD/SMT D-PAK-3 + 150 C Reel 100 W Single 600 V 2.52 V 23 A +/- 100 nA +/- 20 V
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