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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 700 V | 2.37 V | 80 A | +/- 400 nA | +/- 20 V | ||
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VIEW | Microchip Technology | IGBT Transistors 700V 3.5A IGBT | SMD/SMT | TO-252 (DPAK)-3 | + 150 C | Reel | 2.5 W | Single | 700 V | +/- 20 V |
