- Package / Case :
- Gate-Emitter Leakage Current :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,924
In-stock
|
STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A l... | SMD/SMT | DPAK-3 | + 175 C | Reel | 68 W | Single | 650 V | 1.6 V | 8 A | +/- 250 uA | +/- 20 V | ||||
|
970
In-stock
|
STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK-3 | + 175 C | Reel | 283 W | Single | 650 V | 1.6 V | 80 A | +/- 250 nA | +/- 20 V |