- Manufacture :
- Mounting Style :
- Package / Case :
- Gate-Emitter Leakage Current :
17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,924
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A l... | SMD/SMT | DPAK-3 | + 175 C | Reel | 68 W | Single | 650 V | 1.6 V | 8 A | +/- 250 uA | +/- 20 V | ||||
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176
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS4 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.6 V | 100 A | +/- 400 nA | +/- 20 V | ||||
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1,916
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A l... | Through Hole | TO-220FP-3 | + 175 C | 23 W | Single | 650 V | 1.6 V | 8 A | +/- 250 uA | +/- 20 V | |||||
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2,599
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.6 V | 80 A | +/- 400 nA | +/- 20 V | ||||
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417
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V Field Stop Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 882 W | Single | 650 V | 1.6 V | 240 A | +/- 250 nA | +/- 20 V | ||||
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974
In-stock
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STMicroelectronics | IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | ||||
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1,084
In-stock
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STMicroelectronics | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | ||||
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970
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK-3 | + 175 C | Reel | 283 W | Single | 650 V | 1.6 V | 80 A | +/- 250 nA | +/- 20 V | ||||
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304
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 455 W | Single | 650 V | 1.6 V | 150 A | +/- 400 nA | +/- 20 V | ||||
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131
In-stock
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Fairchild Semiconductor | IGBT Transistors FS3 TIGBT Excellent switching performan | Through Hole | TO-247-4 | + 175 C | Tube | 455 W | Single | 650 V | 1.6 V | 150 A | 400 nA | +/- 20 V | ||||
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72
In-stock
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STMicroelectronics | IGBT Transistors Trench gate H series 650V 80A HiSpd | Through Hole | TO-3P | + 175 C | Tube | 469 W | Single | 650 V | 1.6 V | 120 A | 250 nA | +/- 20 V | ||||
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210
In-stock
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onsemi | IGBT Transistors 650V/30A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 1.6 V | 60 A | 100 nA | +/- 20 V | ||||
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895
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS4 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 150 A | +/- 400 nA | +/- 20 V | ||||
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600
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A... | Through Hole | TO-247-3 | + 175 C | 283 W | Single | 650 V | 1.6 V | 80 A | +/- 250 nA | +/- 20 V | |||||
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2,000
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A l... | SMD/SMT | D2PAK-3 | + 175 C | 68 W | Single | 650 V | 1.6 V | 8 A | +/- 250 uA | +/- 20 V | |||||
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495
In-stock
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STMicroelectronics | IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | ||||
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429
In-stock
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STMicroelectronics | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V |