- Manufacture :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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417
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V Field Stop Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 882 W | Single | 650 V | 1.6 V | 240 A | +/- 250 nA | +/- 20 V | |||
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600
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A... | Through Hole | TO-247-3 | + 175 C | 283 W | Single | 650 V | 1.6 V | 80 A | +/- 250 nA | +/- 20 V |
