PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
STGWT60H65DFB	1+ $5.300 10+ $4.500 100+ $3.910 250+ $3.710	PDF RFQ	974 In-stock	STMicroelectronics	IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT	Through Hole	TO-3P	+ 175 C	Tube	375 W	Single	650 V	1.6 V	80 A	250 nA	+/- 20 V
STGWT40H65FB	1+ $4.050 10+ $3.450 100+ $2.990 250+ $2.840	PDF RFQ	1,084 In-stock	STMicroelectronics	IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT	Through Hole	TO-3P	+ 175 C	Tube	283 W	Single	650 V	1.6 V	80 A	250 nA	+/- 20 V
STGWT80H65DFB	1+ $7.140 10+ $6.460 25+ $6.160 100+ $5.340	PDF RFQ	72 In-stock	STMicroelectronics	IGBT Transistors Trench gate H series 650V 80A HiSpd	Through Hole	TO-3P	+ 175 C	Tube	469 W	Single	650 V	1.6 V	120 A	250 nA	+/- 20 V
STGWT80H65FB	1+ $10.910 10+ $10.030 25+ $9.620 50+ $9.100	PDF RFQ	300 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-3P	+ 175 C	Tube	469 W	Single	650 V	1.6 V	120 A	250 nA	20 V
STGWT60H65FB	1+ $5.290 10+ $4.490 25+ $4.420 100+ $3.900	PDF RFQ	495 In-stock	STMicroelectronics	IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT	Through Hole	TO-3P	+ 175 C	Tube	375 W	Single	650 V	1.6 V	80 A	250 nA	+/- 20 V
STGWT40H65DFB	1+ $4.050 10+ $3.440 100+ $2.980 250+ $2.830	PDF RFQ	429 In-stock	STMicroelectronics	IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT	Through Hole	TO-3P	+ 175 C	Tube	283 W	Single	650 V	1.6 V	80 A	250 nA	+/- 20 V