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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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463
In-stock
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Fairchild Semiconductor | IGBT Transistors 1100 V, 50 A Shorted-anode IGBT | Through Hole | TO-3PN | + 175 C | Tube | 300 W | 1100 V | 2.7 V | 50 A | 500 nA | 25 V | |||
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374
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247 | + 175 C | Tube | 333 W | Single | 1100 V | 1.55 V | 60 A | 100 nA | 20 V | ||
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220
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 333 W | Single | 1100 V | 1.55 V | 60 A | 100 nA | 20 V |
