IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRG6B330UDPBF	GET PRICE	PDF RFQ	192 In-stock	IR / Infineon	IGBT Transistors IGBT DISCRETES	Through Hole	TO-220-3	+ 150 C	Tube	160 W	Single	330 V	1.69 V	70 A	+/- 100 nA	+/- 30 V
FGA90N33ATDTU	GET PRICE VIEW	PDF RFQ		Fairchild Semiconductor	IGBT Transistors 330V 90A PDP Trench	Through Hole	TO-3PN-3	+ 150 C	Tube		Single	330 V				+/- 30 V
FGA180N33ATDTU	GET PRICE	PDF RFQ	25 In-stock	Fairchild Semiconductor	IGBT Transistors 330V 180A PDP Trench	Through Hole	TO-3PN-3	+ 150 C	Tube		Single	330 V				+/- 30 V
IRG7I313UPBF	GET PRICE	PDF RFQ	21 In-stock	IR / Infineon	IGBT Transistors 330V 20A	Through Hole	TO-220FP-3		Tube	34 W	Single	330 V	1.45 V	20 A		+/- 30 V

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