Build a global manufacturer and supplier trusted trading platform.
Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGA20S125P_SN00336
GET PRICE
RFQ
1,732
In-stock
Fairchild Semiconductor IGBT Transistors 1250V 20A Shorted Anode IGBT Through Hole TO-3 + 175 C Tube 250 W Single 1.25 kV 2 V 40 A +/- 500 nA +/- 25 V
STGW28IH125DF
GET PRICE
RFQ
561
In-stock
STMicroelectronics IGBT Transistors 1250V 25A trench gate field-stop IGBT Through Hole TO-247-3 + 175 C Tube 375 W Single 1.25 kV 2.65 V 60 A 250 nA 20 V
STGWT20IH125DF
GET PRICE
RFQ
490
In-stock
STMicroelectronics IGBT Transistors 1250V 20A trench gte field-stop IGBT Through Hole TO-3P + 175 C Tube 259 W Single 1.25 kV 2.55 V 40 A 250 nA 20 V
STGWT28IH125DF
GET PRICE
RFQ
232
In-stock
STMicroelectronics IGBT Transistors 1250V 25A trench gte field-stop IGBT Through Hole TO-3P-3 + 175 C Tube 375 W Single 1.25 kV 2.65 V 60 A 250 nA +/- 20 V
STGW20IH125DF
GET PRICE
RFQ
50
In-stock
STMicroelectronics IGBT Transistors 1250V 20A trench gate field-stop IGBT Through Hole TO-247-3 + 175 C Tube 259 W Single 1.25 kV 2.55 V 40 A 250 nA 20 V
Page 1 / 1