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Packaging :
Pd - Power Dissipation :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGD19N40LZ
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RFQ
2,277
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STMicroelectronics IGBT Transistors IGBT & Power Bipolar SMD/SMT DPAK-3 + 175 C Reel 125 W Single 390 V 1.35 V   625 uA 16 V
NGD8205ANT4G
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RFQ
3,020
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Littelfuse IGBT Transistors 20A 350V IGBT N-CHANNEL Through Hole DPAK + 175 C Reel 125 W   390 V   20 A   15 V
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RFQ
386
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Littelfuse IGBT Transistors IGBT 20A 350V N-CHANNEL Through Hole D2PAK-3 + 175 C Tube 150 W   390 V   20 A 350 uA 15 V
NGB8206ANT4G
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RFQ
786
In-stock
Littelfuse IGBT Transistors IGBT 20A 350V N-CHANNEL SMD/SMT D2PAK + 175 C Reel 150 W   390 V   20 A 350 uA 15 V
NGB8206ANTF4G
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RFQ
528
In-stock
Littelfuse IGBT Transistors IGBT 20A 350V N-CHANNEL SMD/SMT D2PAK + 175 C Reel 150 W   390 V   20 A 350 uA 15 V
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