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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGB4620DPBF
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RFQ
539
In-stock
Infineon Technologies IGBT Transistors 600V TRENCH IGBT ULTRAFAST Through Hole TO-220AB-3 + 175 C Tube 140 W Single 600 V 1.97 V 32 A 100 nA +/- 20 V
IXDP20N60BD1
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RFQ
50
In-stock
IXYS IGBT Transistors 20 Amps 600V Through Hole TO-220-3 + 150 C Tube 140 W Single 600 V 2.2 V 32 A 500 nA +/- 20 V
IXDP20N60B
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RFQ
49
In-stock
IXYS IGBT Transistors 20 Amps 600V Through Hole TO-220-3 + 150 C Tube 140 W Single 600 V 2.2 V 32 A 500 nA +/- 20 V
SGH20N60RUFDTU
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RFQ
396
In-stock
Fairchild Semiconductor IGBT Transistors Dis Short Circuit Rated IGBT Through Hole TO-3P-3 + 150 C Tube 195 W Single 600 V 2.2 V 32 A +/- 100 nA +/- 20 V
IRGP4620DPBF
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RFQ
90
In-stock
IR / Infineon IGBT Transistors 600V TRENCH IGBT ULTRAFAST Through Hole TO-247AC-3 + 175 C Tube 140 W Single 600 V 1.97 V 32 A 100 nA +/- 20 V
IRGS4620DPBF
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RFQ
37
In-stock
IR / Infineon IGBT Transistors 600V TRENCH ULTRAFAST IGBT SMD/SMT TO-263-3 + 175 C Tube 140 W Single 600 V 1.55 V 32 A +/- 100 nA +/- 30 V
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