IGBT Transistors - Kaimeite

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8 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IHW30N160R2	GET PRICE	PDF RFQ	494 In-stock	Infineon Technologies	IGBT Transistors RC-IGBT MONO DIODE 1600V 30A	Through Hole	TO-247-3	+ 175 C	Tube	312 W	Single	1600 V	2.35 V	60 A	100 nA	20 V
IXBH40N160	GET PRICE	PDF RFQ	54 In-stock	IXYS	IGBT Transistors 1600V 33A	Through Hole	TO-247AD-3	+ 150 C	Tube	350 W	Single	1600 V				20 V
IHW30N160R2FKSA1	GET PRICE	PDF RFQ	272 In-stock	Infineon Technologies	IGBT Transistors RC-IGBT MONO DIODE 1600V 30A	Through Hole	TO-247-3	+ 175 C	Tube	312 W	Single	1600 V	2.35 V	60 A	100 nA	20 V
IXGH25N160	GET PRICE	PDF RFQ	48 In-stock	IXYS	IGBT Transistors 75 Amps 1600V 2.5 Rds	Through Hole	TO-247-3	+ 150 C	Tube		Single	1600 V				+/- 20 V
IXBF9N160G	GET PRICE	PDF RFQ	24 In-stock	IXYS	IGBT Transistors 9 Amps 1600V 1600V 9A	SMD/SMT	ISOPLUS i4-PAC-3	+ 150 C	Tube		Single	1600 V	4.9 V			20 V
IXBH9N160G	GET PRICE	PDF RFQ	7 In-stock	IXYS	IGBT Transistors 9 Amps 1600V	Through Hole	TO-247AD-3	+ 150 C	Tube		Single	1600 V	4.9 V			20 V
IXBP5N160G	GET PRICE	PDF RFQ	5 In-stock	IXYS	IGBT Transistors 5 Amps 1600V	Through Hole	TO-220-3	+ 150 C	Tube		Single	1600 V	4.9 V			20 V
IXGT25N160	GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 75 Amps 1600V 2.5 Rds	SMD/SMT	TO-268-3	+ 150 C	Tube		Single	1600 V	2.5 V			+/- 20 V

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