IGBT Transistors - Kaimeite

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8 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXGK400N30A3	GET PRICE	PDF RFQ	8 In-stock	IXYS	IGBT Transistors 400 Amps 300V	Through Hole	TO-264-3	+ 150 C	Tube	1 kW	Single	300 V	1.15 V	400 A	400 nA	+/- 20 V
IXGH120N30C3	GET PRICE	PDF RFQ	26 In-stock	IXYS	IGBT Transistors 120 Amps 300V	Through Hole	TO-247AD-3	+ 150 C	Tube	540 W	Single	300 V	1.75 V	75 A	100 nA	+/- 20 V
IXGH100N30C3	GET PRICE	PDF RFQ	11 In-stock	IXYS	IGBT Transistors 100 Amps 300V	Through Hole	TO-247-3	+ 150 C	Tube	460 W	Single	300 V	1.53 V	75 A	100 nA	+/- 20 V
IXGH60N30C3	GET PRICE	PDF RFQ	60 In-stock	IXYS	IGBT Transistors 60 Amps 300V	Through Hole	TO-247AD-3	+ 150 C	Tube	300 W	Single	300 V	1.55 V	75 A	100 nA	+/- 20 V
IXGH85N30C3	GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 85 Amps 300V	Through Hole	TO-247AD-3	+ 150 C	Tube		Single	300 V				+/- 20 V
IXGH120N30B3	GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 120 Amps 300V	Through Hole	TO-247-3	+ 150 C	Tube	540 W	Single	300 V	1.42 V	75 A	100 nA	+/- 20 V
IXGH42N30C3	GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 42 Amps 300V	Through Hole	TO-247-3	+ 150 C	Tube	223 W	Single	300 V	1.54 V		100 nA	+/- 20 V
IXGN400N30A3	GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 400 Amps 300V 1.15 V Rds	SMD/SMT	SOT-227B-4	+ 150 C	Tube	735 W	Single	300 V	1.15 V	400 A	400 nA	+/- 20 V

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