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Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGH50N3
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RFQ
125
In-stock
Fairchild Semiconductor IGBT Transistors 300V PT N-Channel Through Hole TO-247-3 + 150 C Tube 463 W Single 300 V 1.3 V 75 A +/- 250 nA +/- 20 V
IRGP4072DPBF
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RFQ
85
In-stock
Infineon Technologies IGBT Transistors Fast IGBT 300V 40A Ultra Through Hole TO-247-3   Tube 180 W Single 300 V 1.7 V 70 A   +/- 20 V
IXGH100N30C3
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RFQ
11
In-stock
IXYS IGBT Transistors 100 Amps 300V Through Hole TO-247-3 + 150 C Tube 460 W Single 300 V 1.53 V 75 A 100 nA +/- 20 V
IXGH120N30B3
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RFQ
IXYS IGBT Transistors 120 Amps 300V Through Hole TO-247-3 + 150 C Tube 540 W Single 300 V 1.42 V 75 A 100 nA +/- 20 V
IXGH42N30C3
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RFQ
IXYS IGBT Transistors 42 Amps 300V Through Hole TO-247-3 + 150 C Tube 223 W Single 300 V 1.54 V   100 nA +/- 20 V
IRGP4086PBF
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RFQ
16,800
In-stock
IR / Infineon IGBT Transistors 300V 40A Ultra Fast Through Hole TO-247-3   Tube 160 W Single 300 V 2.1 V 70 A   +/- 20 V
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