IGBT Transistors - Kaimeite

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5 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRG4PH50UDPBF	GET PRICE	PDF RFQ	2,534 In-stock	Infineon Technologies	IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT	Through Hole	TO-247-3	+ 150 C	Tube	200 W	Single	1.2 kV	3.7 V	45 A		+/- 20 V
IXYH30N120C3D1	GET PRICE	PDF RFQ	39 In-stock	IXYS	IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT	Through Hole	TO-247-3	+ 150 C	Tube	416 W	Single	1200 V	3.7 V	66 A	100 nA	30 V
IXYH30N120C3	GET PRICE	PDF RFQ	30 In-stock	IXYS	IGBT Transistors 1200V XPT GenX3 IGBT	Through Hole	TO-247-3	+ 150 C	Tube	500 W	Single	1200 V	3.7 V	75 A	100 nA	30 V
IXYP30N120C3	GET PRICE	PDF RFQ	70 In-stock	IXYS	IGBT Transistors GenX3 1200V XPT IGBT	Through Hole	TO-220-3	+ 175 C	Tube	500 W	Single	1200 V	3.7 V	75 A	100 nA	30 V
IRG4PH50UPBF	GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT Transistors 1200V ULTRAFAST 5-40KHZ DSCRETE IGB...	Through Hole	TO-247-3	+ 150 C	Tube	200 W	Single	1.2 kV	3.7 V	45 A		+/- 20 V

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