Build a global manufacturer and supplier trusted trading platform.
9 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4PC40UDPBF
GET PRICE
RFQ
731
In-stock
IR / Infineon IGBT Transistors 600V UltraFast 8-60kHz Through Hole TO-247-3 + 150 C Tube 160 W Single 600 V 2.15 V 40 A 100 nA 20 V
FGH30S150P
GET PRICE
RFQ
397
In-stock
Fairchild Semiconductor IGBT Transistors 1500V 30A FS SA Trench IGBT Through Hole TO-247-3 + 175 C Tube 500 W Single 1.5 kV 2.15 V 60 A +/- 500 nA +/- 25 V
AUIRGP35B60PD
GET PRICE
RFQ
123
In-stock
Infineon Technologies IGBT Transistors AUTO 600V WARP2 150KHZ 84mOhm Through Hole TO-247-3   Tube 308 W   600 V 2.15 V 60 A    
IRGB4630DPBF
GET PRICE
RFQ
198
In-stock
Infineon Technologies IGBT Transistors 600V TRENCH IGBT ULTRAFAST Through Hole TO-220AB-3 + 175 C Tube 206 W Single 600 V 2.15 V 47 A 100 nA +/- 20 V
AUIRGP35B60PD-E
GET PRICE
RFQ
96
In-stock
IR / Infineon IGBT Transistors AUTO 600V WARP2 150KHZ 84mOhm Through Hole TO-247AD-3   Tube 308 W Single 600 V 2.15 V 60 A   +/- 20 V
IRG4IBC10UDPBF
GET PRICE
RFQ
59
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 8-60kHz Through Hole TO-220FP-3   Tube 25 W Single 600 V 2.15 V 6.8 A   +/- 20 V
IXYP8N90C3
VIEW
RFQ
IXYS IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT Through Hole TO-220-3 + 175 C Tube 125 W Single 900 V 2.15 V 20 A 100 nA 30 V
IXYP8N90C3D1
VIEW
RFQ
IXYS IGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs Through Hole TO-220-3 + 175 C Tube 125 W Single 900 V 2.15 V 20 A 100 nA 30 V
IRGP4630DPBF
GET PRICE
RFQ
2
In-stock
IR / Infineon IGBT Transistors 600V TRENCH IGBT ULTRAFAST Through Hole TO-247AC-3 + 175 C Tube 206 W Single 600 V 2.15 V 47 A 100 nA +/- 20 V
Page 1 / 1