IGBT Transistors - Kaimeite

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6 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXLF19N250A	GET PRICE	PDF RFQ	223 In-stock	IXYS	IGBT Transistors High Voltage IGBT 2500V; 19A	Through Hole	ISOPLUS i4-PAC-3	+ 150 C	Tube	250 W	Single	2.5 kV	3.2 V	32 A	500 nA	+/- 20 V
APT15GT120BRDQ1G	GET PRICE	PDF RFQ	246 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ...	Through Hole	TO-247-3	+ 150 C		250 W	Single	1.2 kV	3.2 V	36 A	480 nA	30 V
APT25GT120BRDQ2G	GET PRICE	PDF RFQ	1,862 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ...	Through Hole	TO-247-3	+ 150 C		347 W	Single	1.2 kV	3.2 V	54 A	120 nA	30 V
APT25GT120BRG	GET PRICE	PDF RFQ	125 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ...	Through Hole	TO-247-3	+ 150 C	Tube	347 W	Single	1.2 kV	3.2 V	54 A	120 nA	30 V
IXGA15N120B	GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 30 Amps 1200V 3.2 Rds	SMD/SMT	TO-263-3	+ 150 C	Tube		Single	1200 V	3.2 V			+/- 20 V
IXGT15N120B	GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 30 Amps 1200V 3.2 Rds	SMD/SMT	TO-268-3	+ 150 C	Tube		Single	1200 V	3.2 V			20 V

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