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Maximum Operating Temperature :
Packaging :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
8 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXYN100N120C3H1
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RFQ
656
In-stock
IXYS IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT SMD/SMT SOT-227B-4 + 150 C Tube 690 W Single 1.2 kV 2.9 V 134 A 100 nA +/- 20 V
IXYX100N120C3
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RFQ
260
In-stock
IXYS IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT Through Hole TO-247-3 + 175 C Tube 1150 W Single 1200 V 2.9 V 188 A 100 nA 30 V
FGD5T120SH
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RFQ
2,092
In-stock
Fairchild Semiconductor IGBT Transistors 1200V 5A Field Stop Trench IGBT SMD/SMT D-PAK-3 + 150 C Reel 69 W Single 1.2 kV 2.9 V 10 A +/- 400 nA +/- 25 V
IXGH40N120B2D1
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RFQ
34
In-stock
IXYS IGBT Transistors IGBT, Diode 1200V, 75A Through Hole TO-247-3 + 150 C Tube 380 W Single 1.2 kV 2.9 V 75 A 100 nA +/- 20 V
IXYR100N120C3
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RFQ
20
In-stock
IXYS IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs Through Hole TO-247-3 + 175 C Tube 484 W Single 1200 V 2.9 V 104 A 100 nA 30 V
IXYK100N120C3
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RFQ
20
In-stock
IXYS IGBT Transistors 1200V 188A XPT IGBT Through Hole TO-264-3 + 175 C Tube 1150 W Single 1200 V 2.9 V 188 A 100 nA 30 V
IXYN100N120C3
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RFQ
3
In-stock
IXYS IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT SMD/SMT SOT-227B-4 + 175 C Tube 830 W Single 1200 V 2.9 V 152 A 100 nA 30 V
FGB40T65SPD_F085
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RFQ
800
In-stock
Fairchild Semiconductor IGBT Transistors Trench IGBT SMD/SMT TO-263-3 + 175 C Reel 267 W Single 650 V 2.9 V 80 A +/- 400 nA +/- 20 V
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