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8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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656
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 690 W | Single | 1.2 kV | 2.9 V | 134 A | 100 nA | +/- 20 V | |||
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260
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 1150 W | Single | 1200 V | 2.9 V | 188 A | 100 nA | 30 V | |||
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2,092
In-stock
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Fairchild Semiconductor | IGBT Transistors 1200V 5A Field Stop Trench IGBT | SMD/SMT | D-PAK-3 | + 150 C | Reel | 69 W | Single | 1.2 kV | 2.9 V | 10 A | +/- 400 nA | +/- 25 V | |||
|
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34
In-stock
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IXYS | IGBT Transistors IGBT, Diode 1200V, 75A | Through Hole | TO-247-3 | + 150 C | Tube | 380 W | Single | 1.2 kV | 2.9 V | 75 A | 100 nA | +/- 20 V | |||
|
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20
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs | Through Hole | TO-247-3 | + 175 C | Tube | 484 W | Single | 1200 V | 2.9 V | 104 A | 100 nA | 30 V | |||
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20
In-stock
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IXYS | IGBT Transistors 1200V 188A XPT IGBT | Through Hole | TO-264-3 | + 175 C | Tube | 1150 W | Single | 1200 V | 2.9 V | 188 A | 100 nA | 30 V | |||
|
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3
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT | SMD/SMT | SOT-227B-4 | + 175 C | Tube | 830 W | Single | 1200 V | 2.9 V | 152 A | 100 nA | 30 V | |||
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800
In-stock
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Fairchild Semiconductor | IGBT Transistors Trench IGBT | SMD/SMT | TO-263-3 | + 175 C | Reel | 267 W | Single | 650 V | 2.9 V | 80 A | +/- 400 nA | +/- 20 V |