2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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494
In-stock
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Infineon Technologies | IGBT Transistors RC-IGBT MONO DIODE 1600V 30A | Through Hole | TO-247-3 | + 175 C | Tube | 312 W | Single | 1600 V | 2.35 V | 60 A | 100 nA | 20 V | |||
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272
In-stock
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Infineon Technologies | IGBT Transistors RC-IGBT MONO DIODE 1600V 30A | Through Hole | TO-247-3 | + 175 C | Tube | 312 W | Single | 1600 V | 2.35 V | 60 A | 100 nA | 20 V |
