IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IHW30N160R2	1+ $5.020 10+ $4.260 100+ $3.700 250+ $3.510		PDF RFQ	494 In-stock	Infineon Technologies	IGBT Transistors RC-IGBT MONO DIODE 1600V 30A	Through Hole	TO-247-3	+ 175 C	Tube	312 W	Single	1600 V	2.35 V	60 A	100 nA	20 V
	IHW30N160R2FKSA1	1+ $5.020 10+ $4.260 100+ $3.700 250+ $3.510		PDF RFQ	272 In-stock	Infineon Technologies	IGBT Transistors RC-IGBT MONO DIODE 1600V 30A	Through Hole	TO-247-3	+ 175 C	Tube	312 W	Single	1600 V	2.35 V	60 A	100 nA	20 V
	IXYT30N65C3H1HV	1+ $6.740 10+ $6.090 25+ $5.810 100+ $5.040		PDF RFQ	17 In-stock	IXYS	IGBT Transistors 650V/60A XPT Copacked TO-268HV	Through Hole	TO-268HV-2	+ 175 C	Tube	270 W	Single	650 V	2.35 V	60 A	100 nA	30 V
	IXYH30N65C3H1	1+ $5.950 10+ $5.380 25+ $5.130 100+ $4.450		PDF RFQ	39 In-stock	IXYS	IGBT Transistors 650V/60A XPT C3 Copacked TO-247	Through Hole	TO-247-3	+ 175 C	Tube	270 W	Single	650 V	2.35 V	60 A	100 nA	30 V

IHW30N160R2

IHW30N160R2

Infineon Technologies

IGBT Transistors RC-IGBT MONO DIODE 1600V 30A

Stock : 494

1+: $5.020

10+: $4.260

100+: $3.700

250+: $3.510

IHW30N160R2FKSA1

IHW30N160R2FKSA1

Infineon Technologies

IGBT Transistors RC-IGBT MONO DIODE 1600V 30A

Stock : 272

1+: $5.020

10+: $4.260

100+: $3.700

250+: $3.510

IXYT30N65C3H1HV

IXYT30N65C3H1HV

IXYS

IGBT Transistors 650V/60A XPT Copacked TO-268HV

Stock : 17

1+: $6.740

10+: $6.090

25+: $5.810

100+: $5.040

IXYH30N65C3H1

IXYH30N65C3H1

IXYS

IGBT Transistors 650V/60A XPT C3 Copacked TO-247

Stock : 39

1+: $5.950

10+: $5.380

25+: $5.130

100+: $4.450

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