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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,978
In-stock
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Fairchild Semiconductor | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | +/- 100 nA | +/- 20 V | |||
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1,723
In-stock
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Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | 100 nA | +/- 20 V | |||
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3,693
In-stock
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Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-60 KHZ COPACK IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | +/- 20 V | ||||
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676
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/12A | Through Hole | TO-3PF-3 | + 150 C | Tube | 75 W | Single | 600 V | 2.1 V | 23 A | +/- 100 nA | +/- 20 V | |||
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349
In-stock
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Infineon Technologies | IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | 100 nA | +/- 20 V | |||
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VIEW | Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | +/- 20 V | |||||
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VIEW | Fairchild Semiconductor | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | +/- 100 nA | +/- 20 V |