IGBT Transistors - Kaimeite

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PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
HGTG18N120BND	GET PRICE	PDF RFQ	220 In-stock	Fairchild Semiconductor	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde	Through Hole	TO-247-3	+ 150 C	Tube	390 W	Single	1200 V	2.45 V	54 A	+/- 250 nA	+/- 20 V
HGTG10N120BND	GET PRICE	PDF RFQ	203 In-stock	Fairchild Semiconductor	IGBT Transistors 35A 1200V N-Ch	Through Hole	TO-247-3	+ 150 C	Tube	298 W	Single	1200 V	2.45 V	17 A	+/- 250 nA	+/- 20 V
HGTG5N120BND	GET PRICE	PDF RFQ	25 In-stock	Fairchild Semiconductor	IGBT Transistors 21a 1200V IGBT NPT Series N-Ch	Through Hole	TO-247-3	+ 150 C	Tube	167 W	Single	1200 V	2.45 V	21 A	+/- 250 nA	+/- 20 V

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