IGBT Transistors - Kaimeite

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3 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRG4BC30FPBF	GET PRICE	PDF RFQ	243 In-stock	Infineon Technologies	IGBT Transistors 600V Fast 1-8kHz	Through Hole	TO-220-3	+ 150 C	Tube	100 W	Single	600 V	1.59 V	31 A	100 nA	+/- 20 V
IRG4PC30FPBF	GET PRICE	PDF RFQ	324 In-stock	Infineon Technologies	IGBT Transistors 600V Fast 1-8kHz	Through Hole	TO-247-3	+ 150 C	Tube	100 W	Single	600 V	1.59 V	31 A	100 nA	+/- 20 V
IRG4BC30FDPBF	GET PRICE	PDF RFQ	87 In-stock	Infineon Technologies	IGBT Transistors 600V Fast 1-8kHz	Through Hole	TO-220-3	+ 150 C	Tube	100 W	Single	600 V	1.59 V	31 A	100 nA	+/- 20 V

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