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Package / Case :
Packaging :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4PSH71UDPBF
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RFQ
54
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Infineon Technologies IGBT Transistors 1200V UltraFast 4-20kHz Through Hole TO-274-3 + 150 C Tube 350 W Single 1.2 kV 2.52 V 99 A 100 nA +/- 20 V
AUIRG4BC30USTRL
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RFQ
800
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Infineon Technologies IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE... SMD/SMT D-PAK-3 + 150 C Reel 100 W Single 600 V 2.52 V 23 A +/- 100 nA +/- 20 V
AUIRG4BC30USTRR
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IR / Infineon IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE... SMD/SMT D-PAK-3 + 150 C Reel 100 W Single 600 V 2.52 V 23 A +/- 100 nA +/- 20 V
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