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Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGB20B60PD1PBF
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RFQ
57,400
In-stock
Infineon Technologies IGBT Transistors 600V Warp2 150kHz Through Hole TO-220-3 + 150 C Tube 215 W Single 600 V 2.05 V 40 A 100 nA +/- 20 V
IRGPS4067DPbF
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RFQ
70
In-stock
Infineon Technologies IGBT Transistors 600V 1.6V 120A Solar UPS Welding Through Hole TO-247-3   Tube 750 W   600 V 2.05 V 240 A 400 nA 20 V
AUIRGPS4067D1
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RFQ
34
In-stock
IR / Infineon IGBT Transistors Automotive 600V 160A Trench IGBT Through Hole TO-247-3   Tube 750 W   600 V 2.05 V 240 A 100 nA 20 V
IRG4BC40W-SPBF
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RFQ
309
In-stock
Infineon Technologies IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT SMD/SMT D-PAK-3 + 150 C Tube 160 W Single 600 V 2.05 V 40 A 100 nA +/- 20 V
IGW40N120H3
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RFQ
475
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 483 W Single 1200 V 2.05 V 80 A 600 nA +/- 20 V
IRG7PH30K10PBF
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RFQ
94
In-stock
IR / Infineon IGBT Transistors Trnch IGBT 1200V 10A single IGBT Through Hole TO-247-3 + 175 C Tube 210 W Single 1.2 kV 2.05 V 33 A 100 nA +/- 30 V
IRGP4063D-EPBF
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RFQ
54
In-stock
IR / Infineon IGBT Transistors 600V UltraFast IGBT 48A 5uS 1.65V VCE Through Hole TO-247AD-3   Tube 330 W   600 V 2.05 V 96 A 100 nA 20 V
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