IGBT Transistors - Kaimeite

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8 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	AUIRG4PH50S		GET PRICE	PDF RFQ	19,200 In-stock	Infineon Technologies	IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO I...	Through Hole	TO-247-3		Tube	200 W	Single	1.2 kV	1.7 V	57 A		+/- 20 V
	IRG7PH50UPBF		GET PRICE	PDF RFQ	70 In-stock	Infineon Technologies	IGBT Transistors 1200V 140A	Through Hole	TO-247-3	+ 175 C	Tube	556 W	Single	1.2 kV	1.7 V	140 A	200 nA	+/- 30 V
	IRGP4072DPBF		GET PRICE	PDF RFQ	85 In-stock	Infineon Technologies	IGBT Transistors Fast IGBT 300V 40A Ultra	Through Hole	TO-247-3		Tube	180 W	Single	300 V	1.7 V	70 A		+/- 20 V
	APT35GN120BG		GET PRICE	PDF RFQ	15 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F...	Through Hole	TO-247-3	+ 150 C	Tube	379 W	Single	1.2 kV	1.7 V	94 A	600 nA	30 V
	NGTB75N60SWG		GET PRICE	PDF RFQ	46 In-stock	onsemi	IGBT Transistors FSII 75A 600V Welding	Through Hole	TO-247-3	+ 175 C	Tube	595 W	Single	600 V	1.7 V	100 A	200 nA	+/- 20 V
	HGTG40N60A4		GET PRICE	PDF RFQ	3,000 In-stock	Fairchild Semiconductor	IGBT Transistors 600V N-Channel IGBT SMPS Series	Through Hole	TO-247-3	+ 150 C	Tube	625 W	Single	600 V	1.7 V	75 A	+/- 250 nA	+/- 20 V
	IRG4PC40FDPBF		GET PRICE	PDF RFQ	575 In-stock	Infineon Technologies	IGBT Transistors 600V Fast 1-8kHz	Through Hole	TO-247-3		Tube	160 W	Single	600 V	1.7 V	49 A		+/- 20 V
	IRG7PH46UPBF		GET PRICE	PDF RFQ	85 In-stock	IR / Infineon	IGBT Transistors 1200V 108A	Through Hole	TO-247-3	+ 175 C	Tube	469 W	Single	1.2 kV	1.7 V	130 A	200 nA	+/- 30 V

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