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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGA5065ADF
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Fairchild Semiconductor IGBT Transistors FS3 650V SHD prolferation Through Hole TO-3PN + 175 C Tube 268 W Single 650 V 2.28 V 100 A +/- 400 nA +/- 30 V
IRGP30B120KD-EP
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Infineon Technologies IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT Through Hole TO-247-3 + 150 C Tube 300 W Single 1.2 kV 2.28 V 60 A   +/- 20 V
IRGP30B120KDPBF
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Infineon Technologies IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT Through Hole TO-247AD-3 + 150 C Tube 300 W   1200 V 2.28 V 60 A +/- 100 nA +/- 20 V
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