IGBT Transistors - Kaimeite

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3 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXYH50N65C3H1	GET PRICE	PDF RFQ	60 In-stock	IXYS	IGBT Transistors 650V/130A XPTI C3-Class TO-247	Through Hole	TO-247-3	+ 175 C	Tube	600 W	Single	650 V	1.74 V	130 A	100 nA	30 V
IXYP50N65C3	GET PRICE	PDF RFQ	99 In-stock	IXYS	IGBT Transistors 650V/130A XPT C3-Class TO-220	Through Hole	TO-220-3	+ 175 C	Tube	600 W	Single	650 V	1.74 V	130 A	100 nA	30 V
IXYH50N65C3	GET PRICE	PDF RFQ	27 In-stock	IXYS	IGBT Transistors 650V/130A XPT C3-Class TO-247	Through Hole	TO-247-3	+ 175 C	Tube	600 W	Single	650 V	1.74 V	130 A	100 nA	30 V

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