2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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122
In-stock
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onsemi | IGBT Transistors 1200V/40A FS1 IGBT IH | Through Hole | TO-247 | + 150 C | Tube | 260 W | Single | 1200 V | 1.9 V | 80 A | 200 nA | 20 V | |||
|
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117
In-stock
|
onsemi | IGBT Transistors 1200V/40A FS1 IGBT | Through Hole | TO-247 | + 150 C | Tube | 260 W | Single | 1200 V | 1.9 V | 80 A | 200 nA | 20 V |