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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB40N120IHLWG
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122
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onsemi IGBT Transistors 1200V/40A FS1 IGBT IH Through Hole TO-247 + 150 C Tube 260 W Single 1200 V 1.9 V 80 A 200 nA 20 V
NGTB40N120LWG
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RFQ
117
In-stock
onsemi IGBT Transistors 1200V/40A FS1 IGBT Through Hole TO-247 + 150 C Tube 260 W Single 1200 V 1.9 V 80 A 200 nA 20 V
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