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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Infineon Technologies | IGBT Transistors 600V UltraFast 10-30kHz | Through Hole | TO-262-3 | + 150 C | Tube | 49 W | Single | 600 V | 2.02 V | 14 A | 100 nA | +/- 20 V |
