IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Maximum Gate Emitter Voltage
IRG4BH20K-SPBF	GET PRICE	PDF RFQ	3,200 In-stock	IR / Infineon	IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGB...	SMD/SMT	D-PAK-3	+ 150 C	Tube	60 W	Single	1.2 kV	3.17 V	11 A	+/- 20 V
IRG4PH20KPBF	GET PRICE	PDF RFQ	245 In-stock	Infineon Technologies	IGBT Transistors 1200V UltraFast 4-20kHz	Through Hole	TO-247-3		Tube	60 W	Single	1.2 kV	3.17 V	11 A	+/- 20 V
IRG4BH20K-LPBF	GET PRICE	PDF RFQ	450 In-stock	Infineon Technologies	IGBT Transistors 1200V UltraFast 4-20kHz	Through Hole	TO-262-3		Tube	60 W	Single	1.2 kV	3.17 V	11 A	+/- 20 V
IRG4PH20KDPBF	GET PRICE	PDF RFQ	112 In-stock	Infineon Technologies	IGBT Transistors 1200V UltraFast 4-20kHz	Through Hole	TO-247-3		Tube	60 W	Single	1.2 kV	3.17 V	11 A	+/- 20 V

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