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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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630
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Trench for IPL Application | Through Hole | TO-220F | + 150 C | Tube | 30 W | 650 V | 1.88 V | 170 A | 400 nA | 25 V |
