- Mounting Style :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
33 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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GET PRICE |
10,400
In-stock
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onsemi | IGBT Transistors Copak Discrete | Through Hole | TO-3P-3 | + 150 C | Tube | 312 W | Single | 1200 V | 2 V | 50 A | +/- 250 nA | +/- 20 V | |||
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939
In-stock
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STMicroelectronics | IGBT Transistors N-Ch Clamped 20 Amp | SMD/SMT | D2PAK-3 | + 150 C | Reel | 200 W | Single | 20 V | 2 V | 40 A | +/- 660 uA | 12 V | ||||
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1,275
In-stock
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STMicroelectronics | IGBT Transistors PowerMESH" IGBT | Through Hole | TO-220-3 FP | + 150 C | Tube | Single | 600 V | 2 V | 150 uA | +/- 20 V | ||||||
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1,936
In-stock
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STMicroelectronics | IGBT Transistors PowerMESH" IGBT | Through Hole | TO-220-3 FP | + 150 C | Tube | 25 W | Single | 600 V | 2 V | 100 nA | +/- 20 V | |||||
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2,410
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 600 V | 2 V | 55 A | 100 nA | 20 V | ||||
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63
In-stock
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Fairchild Semiconductor | IGBT Transistors 1200V 30A FS | Through Hole | TO-3P-3 | + 150 C | Tube | 339 W | Single | 1200 V | 2 V | 30 A | +/- 25 V | |||||
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138
In-stock
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IR / Infineon | IGBT Transistors 600V Warp2 150kHz | Through Hole | TO-247-3 | + 150 C | Tube | 370 W | Single | 600 V | 2 V | 75 A | 100 nA | +/- 20 V | ||||
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1,385
In-stock
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STMicroelectronics | IGBT Transistors PowerMESH" IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 25 W | Single | 600 V | 2 V | 100 nA | +/- 20 V | |||||
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97
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 600 V | 2 V | 64 A | 100 nA | 30 V | ||||
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660
In-stock
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STMicroelectronics | IGBT Transistors PowerMESH" IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 28 W | Single | 600 V | 2 V | 11 A | 150 uA | +/- 20 V | ||||
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51
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | Bulk | 416 W | Single | 600 V | 2 V | 96 A | +/- 100 nA | +/- 30 V | ||||
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186
In-stock
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Infineon Technologies | IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT | SMD/SMT | TO-263-3 | + 150 C | Tube | 90 W | Single | 600 V | 2 V | 13 A | +/- 20 V | |||||
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146
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 446 W | Single | 600 V | 2 V | 110 A | 120 nA | 30 V | ||||
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22
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | SMD/SMT | TO-264-3 | + 150 C | Tube | 625 W | Single | 600 V | 2 V | 143 A | 100 nA | 30 V | ||||
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50
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | 345 W | Single | 600 V | 2 V | 80 A | 100 nA | 30 V | |||||
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60
In-stock
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IXYS | IGBT Transistors SGL IGBT 1200V, 80A | Through Hole | TO-247-3 | + 150 C | Tube | 360 W | Single | 1.2 kV | 2 V | 75 A | 100 nA | +/- 20 V | ||||
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13
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 600 V | 2 V | 143 A | 100 nA | 30 V | ||||
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151
In-stock
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onsemi | IGBT Transistors 1200V/25A IGBT SOLAR/UPS | Through Hole | TO-247 | + 150 C | Tube | 192 W | Single | 1200 V | 2 V | 50 A | 100 nA | 20 V | ||||
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113
In-stock
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onsemi | IGBT Transistors 1200V/40A IGBT SOLAR/UPS | Through Hole | TO-247 | + 150 C | Tube | 260 W | Single | 1200 V | 2 V | 80 A | 200 nA | 25 V | ||||
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630
In-stock
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STMicroelectronics | IGBT Transistors N-Ch Clamped 20 Amp | SMD/SMT | D2PAK-3 | + 150 C | Reel | 200 W | Single | 20 V | 2 V | 40 A | +/- 660 uA | 12 V | ||||
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984
In-stock
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STMicroelectronics | IGBT Transistors 2A 6V SHORT CIRCUIT RUGGED IGBT | Through Hole | TO-220FP-3 | + 150 C | Tube | 32 W | Single | 600 V | 2 V | 35 A | 100 nA | 20 V | ||||
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2,498
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 1200 Volt 5 Amp | SMD/SMT | TO-252-3 | + 150 C | Reel | 55 W | Single | 1200 V | 2 V | 10 A | +/- 100 nA | +/- 20 V | ||||
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VIEW | Infineon Technologies | IGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2 CH | SMD/SMT | DPAK-3 | + 150 C | Reel | 77 W | Single | 600 V | 2 V | 12 A | +/- 100 nA | +/- 20 V | ||||
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VIEW | onsemi | IGBT Transistors 1200V/15A IGBT SOLAR/UPS | Through Hole | TO-247 | + 150 C | Tube | 156 W | Single | 1200 V | 2 V | 30 A | 100 nA | 20 V | ||||
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VIEW | Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT | Through Hole | TO-274AA-3 | + 150 C | Tube | 350 W | Single | 600 V | 2 V | 85 A | +/- 20 V | |||||
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VIEW | IR / Infineon | IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 520 W | Single | 600 V | 2 V | 75 A | +/- 20 V | |||||
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VIEW | IXYS | IGBT Transistors 14 Amps 600V 2.0 Rds | SMD/SMT | TO-263-3 | + 150 C | Tube | Single | 600 V | 2 V | +/- 20 V | |||||||
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180
In-stock
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onsemi | IGBT Transistors 600V/40A IGBT FS1 IH TO | Through Hole | TO-247 | + 150 C | Tube | 250 W | Single | 600 V | 2 V | 80 A | 100 nA | 20 V | ||||
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23
In-stock
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IR / Infineon | IGBT Transistors IGBT DISCRETES | Through Hole | TO-274AA-3 | + 150 C | Tube | 462 W | Single | 1.2 kV | 2 V | 116 A | +/- 200 nA | +/- 30 V | ||||
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5
In-stock
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IXYS | IGBT Transistors 14 Amps 600V 2.0 Rds | Through Hole | TO-220-3 | + 150 C | Tube | Single | 600 V | 2 V | +/- 20 V |