- Package / Case :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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346
In-stock
|
IR / Infineon | IGBT Transistors 600V TRENCH ULTRAFAST IGBT | SMD/SMT | DPAK-3 | + 175 C | Tube | 58 W | Single | 600 V | 1.75 V | 11 A | 100 nA | 20 V | ||
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|
GET PRICE |
45
In-stock
|
IR / Infineon | IGBT Transistors 600V TRENCH ULTRAFAST IGBT | SMD/SMT | D-PAK-3 | + 175 C | Tube | 58 W | Single | 600 V | 1.75 V | 11 A | +/- 100 nA | +/- 30 V |
