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57 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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10,425
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STMicroelectronics | IGBT Transistors Ultra Fast IGBT 35A 600V | Through Hole | TO-247 | + 150 C | Tube | 200 W | 2.5 V | 60 A | 100 nA | 20 V | |||||
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4,505
In-stock
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Fairchild Semiconductor | IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series | SMD/SMT | TO-252AA-3 | + 150 C | Reel | 60 W | Single | 1200 V | 2.5 V | 5.3 A | +/- 250 nA | +/- 20 V | |||
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2,782
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600 Volt 14 Amp | SMD/SMT | D2PAK-3 | + 150 C | Reel | 25 W | Single | 600 V | 2.5 V | 10 A | +/- 100 nA | +/- 20 V | |||
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2,474
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600 Volt 14 Amp | SMD/SMT | TO-252-3 | + 150 C | Reel | 70 W | Single | 600 V | 2.5 V | 25 A | +/- 100 nA | +/- 20 V | |||
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46
In-stock
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IXYS | IGBT Transistors HIGH VOLT NPT IGBTS 1700V 95A | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 735 W | Single | 1.7 kV | 2.5 V | 160 A | 200 nA | +/- 20 V | |||
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145
In-stock
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IXYS | IGBT Transistors 50 Amps 1700V 3.3 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 1.7 kV | 2.5 V | 50 A | 100 nA | +/- 20 V | |||
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12,000
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600 Volt 30 Amp | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 600 V | 2.5 V | 60 A | +/- 100 nA | +/- 20 V | |||
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407
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V 4 0A UFD | Through Hole | TO-3P-3 | + 150 C | Tube | 156 W | Single | 1000 V | 2.5 V | +/- 500 nA | +/- 25 V | ||||
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353
In-stock
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Infineon Technologies | IGBT Transistors 600V Warp 60-150kHz | Through Hole | TO-247-3 | Tube | 160 W | Single | 600 V | 2.5 V | 40 A | +/- 20 V | |||||
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475
In-stock
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STMicroelectronics | IGBT Transistors 35 A 600 V Ultra fast IGBT | Through Hole | TO-247 | + 150 C | Tube | 200 W | Single | 600 V | 2.5 V | 60 A | 0.1 uA | +/- 20 V | |||
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768
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600 Volt 30 Amp | Through Hole | TO-220-3 | + 150 C | Tube | 200 W | Single | 600 V | 2.5 V | 60 A | +/- 100 nA | +/- 20 V | |||
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29
In-stock
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IXYS | IGBT Transistors | SMD/SMT | TO-268HV-2 | + 150 C | 500 W | Single | 3 kV | 2.5 V | 104 A | +/- 200 nA | +/- 25 V | ||||
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2,910
In-stock
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Infineon Technologies | IGBT Transistors 600V 30A 187W | Through Hole | TO-247-3 | + 175 C | Tube | 187 W | Single | 600 V | 2.5 V | 60 A | 100 nA | 20 V | |||
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850
In-stock
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STMicroelectronics | IGBT Transistors IGBT | Through Hole | TO-220-3 FP | + 150 C | Tube | 80 W | Single | 600 V | 2.5 V | +/- 100 nA | +/- 20 V | ||||
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350
In-stock
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IR / Infineon | IGBT Transistors 600V Warp 60-150kHz | Through Hole | TO-220-3 | Tube | 160 W | Single | 600 V | 2.5 V | 40 A | +/- 20 V | |||||
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172
In-stock
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IR / Infineon | IGBT Transistors 600V Low-Vceon Non Punch Through | Through Hole | TO-262-3 | Tube | 63 W | Single | 600 V | 2.5 V | 12 A | +/- 20 V | |||||
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35
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 297 W | Single | 1.2 kV | 2.5 V | 52 A | 100 nA | 30 V | |||
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115
In-stock
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Infineon Technologies | IGBT Transistors 600V Warp 60-150kHz | Through Hole | TO-262-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.5 V | 40 A | +/- 20 V | ||||
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486
In-stock
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Infineon Technologies | IGBT Transistors 600V Low-Vceon Non Punch Through | Through Hole | TO-220AB-3 | Tube | 63 W | Single | 600 V | 2.5 V | 12 A | +/- 20 V | |||||
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28
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/105A | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1200 V | 2.5 V | 105 A | 100 nA | 30 V | |||
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11,800
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | 468 W | Single | 1.2 kV | 2.5 V | 80 A | 250 nA | 20 V | ||||
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482
In-stock
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Infineon Technologies | IGBT Transistors 600V LO-VCEON NON PNCH THRU COPCK ... | SMD/SMT | TO-263-3 | + 150 C | Tube | 63 W | Single | 600 V | 2.5 V | 12 A | +/- 20 V | ||||
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54
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 | Through Hole | TO-247-3 | + 150 C | 500 W | Single | 1.2 kV | 2.5 V | 88 A | 250 nA | 30 V | ||||
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2,400
In-stock
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Infineon Technologies | IGBT Transistors 600V 30A 187W | Through Hole | TO-247-3 | + 175 C | Tube | 187 W | Single | 600 V | 2.5 V | 60 A | 100 nA | 20 V | |||
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308
In-stock
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IR / Infineon | IGBT Transistors 600V Low VCEon | Through Hole | TO-220-3 | Tube | 63 W | Single | 600 V | 2.5 V | 12 A | +/- 20 V | |||||
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30
In-stock
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IXYS | IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A | Through Hole | TO-264-3 | + 150 C | Tube | 830 W | Single | 1.7 kV | 2.5 V | 170 A | 200 nA | +/- 20 V | |||
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16
In-stock
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IXYS | IGBT Transistors 32 Amps 1700V 2.5 Rds | Through Hole | PLUS 247-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 2.5 V | 75 A | 100 nA | +/- 20 V | |||
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37
In-stock
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IXYS | IGBT Transistors 72 Amps 1700 V 3.3 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 2.5 V | 75 A | 100 nA | +/- 20 V | |||
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48
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-264-3 | + 150 C | Tube | 500 W | Single | 900 V | 2.5 V | 117 A | 100 nA | 30 V | |||
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65
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | 337 W | Single | 900 V | 2.5 V | 78 A | 100 nA | 30 V |