IGBT Transistors - Kaimeite

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PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXGH24N170A	GET PRICE	PDF RFQ	23 In-stock	IXYS	IGBT Transistors 24 Amps 1200 V 5 V Rds	Through Hole	TO-247-3	+ 150 C	Tube	250 W	Single	1.7 kV	4.5 V	24 A	100 nA	+/- 20 V
IXGT10N170A	GET PRICE	PDF RFQ	11 In-stock	IXYS	IGBT Transistors 20 Amps 1700 V 7 V Rds	SMD/SMT	TO-268-3	+ 150 C	Tube	140 W	Single	1.7 kV	4.5 V	10 A	100 nA	+/- 20 V
IXGT24N170A	GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 24 Amps 1200 V 5 V Rds	SMD/SMT	TO-268-3	+ 150 C	Tube		Single	1700 V	4.5 V			20 V

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