IGBT Transistors - Kaimeite

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7 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Maximum Gate Emitter Voltage
IRG4PH50KDPBF	GET PRICE	PDF RFQ	2,089 In-stock	Infineon Technologies	IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT	Through Hole	TO-247-3	+ 150 C	Tube	200 W	Single	1.2 kV	3.5 V	45 A	+/- 20 V
IRG4PH40UPBF	GET PRICE	PDF RFQ	213 In-stock	Infineon Technologies	IGBT Transistors 1200V UltraFast 5-40kHz	Through Hole	TO-247-3		Tube	160 W	Single	1.2 kV	3.5 V	30 A	+/- 20 V
IRGPS40B120UDP	GET PRICE	PDF RFQ	79 In-stock	Infineon Technologies	IGBT Transistors 1200V UltraFast 5-40kHz	Through Hole	TO-274AA-3		Tube	595 W	Single	1.2 kV	3.5 V	80 A	+/- 20 V
IXGT30N120B3D1	GET PRICE	PDF RFQ	82 In-stock	IXYS	IGBT Transistors 60 Amps 1200V	SMD/SMT	TO-268-3	+ 150 C	Tube			1200 V	3.5 V
IXGR32N170H1	GET PRICE	PDF RFQ	38 In-stock	IXYS	IGBT Transistors 17 Amps 1700V 5.2 Rds	SMD/SMT	ISOPLUS247-3	+ 150 C	Tube		Single	1.7 kV	3.5 V	38 A	+/- 20 V
IRGPS40B120UPBF	GET PRICE	PDF RFQ	100 In-stock	Infineon Technologies	IGBT Transistors 1200V UltraFast 8-25kHz Single IGBT	Through Hole	TO-274AA-3		Tube	595 W	Single	1.2 kV	3.5 V	80 A	+/- 20 V
IRG4PH50KPBF	GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGB...	Through Hole	TO-247-3	+ 150 C	Tube	200 W	Single	1.2 kV	3.5 V	45 A	+/- 20 V

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