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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IKW30N65EL5XKSA1
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RFQ
962
In-stock
Infineon Technologies IGBT Transistors 650V IGBT Trenchstop 5 Through Hole TO-247-3 + 175 C Tube 227 W Single 650 V 1.05 V 85 A 100 nA 20 V
IGW30N65L5XKSA1
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RFQ
424
In-stock
Infineon Technologies IGBT Transistors 650V IGBT Trenchstop 5 Through Hole TO-247-3 + 175 C Tube 227 W Single 650 V 1.05 V 85 A 100 nA 20 V
IXGK320N60A3
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RFQ
50
In-stock
IXYS IGBT Transistors 320 Amps 600V Through Hole TO-264-3 + 150 C Tube 1 kW Single 600 V 1.05 V 320 A 400 nA +/- 20 V
IKW30N65NL5XKSA1
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RFQ
222
In-stock
Infineon Technologies IGBT Transistors 650V IGBT Trenchstop 5 Through Hole TO-247-3 + 175 C Tube 227 W Single 650 V 1.05 V 85 A 100 nA 20 V
IXGX320N60A3
GET PRICE
RFQ
30
In-stock
IXYS IGBT Transistors 320 Amps 600V Through Hole PLUS 247-3 + 150 C Tube 1 kW Single 600 V 1.05 V 320 A 400 nA +/- 20 V
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