- Maximum Operating Temperature :
- Maximum Gate Emitter Voltage :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK-3 | + 175 C | Reel | 167 W | Single | 600 V | 1.8 V | 40 A | 250 nA | 20 V | |||
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VIEW | STMicroelectronics | IGBT Transistors 30 A 600V FAST IGBT | SMD/SMT | D2PAK-3 | + 150 C | Reel | 200 W | Single | 600 V | 1.8 V | 60 A | +/- 20 V |
